advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v small size & lower profile r ds(on) 9m rohs compliant & halogen-free i d 15a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-c maximum thermal resistance, junction-case 5 /w rthj-a maximum thermal resistance, junction-ambient 3 40 /w data and specifications subject to change without notice 201206211 1 AP6680CGYT-HF rating halogen-free product 30 + 20 15 parameter drain-source voltage gate-source voltage continuous drain current 3 -55 to 150 continuous drain current 3 12 pulsed drain current 1 50 storage temperature range 3.13 -55 to 150 thermal data parameter total power dissipation operating junction temperature range g d s d d d d s s s g pmpak ? 3x3 ap6680c series are from advanced power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the pmpak ? 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - 6.6 9 m v gs =4.5v, i d =8a - 11.3 15 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 1.45 3 v g fs forward transconductance v ds =10v, i d =12a - 20 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =12a - 10 16 nc q gs gate-source charge v ds =15v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5 - nc t d(on) turn-on delay time v ds =15v - 10 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 -22- ns t f fall time v gs =10v - 5.5 - ns c iss input capacitance v gs =0v - 960 1540 pf c oss output capacitance v ds =15v - 175 - pf c rss reverse transfer capacitance f=1.0mhz - 135 - pf r g gate resistance f=1.0mhz - 1.9 3.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2.6a, v gs =0v - - 1.2 v t rr reverse recovery time i s =12a, v gs =0 v , - 18 - ns q rr reverse recovery charge di/dt=100a/s - 9 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 3.surface mounted on 1 in 2 2oz copper pad of fr4 board, t < 10sec ; 210 o c/w when mounted on min. copper pad. 2 AP6680CGYT-HF
a p6680cgyt-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 60 012345 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t a =25 o c 0 10 20 30 40 50 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 6 8 10 12 14 16 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =8a t a =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =250ua
AP6680CGYT-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain fig 12. gate charge waveform current v.s. ambient temperature 4 q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 048121620 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =12a v ds =15v 0 200 400 600 800 1000 1200 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thia =210 /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on) 0 4 8 12 16 20 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a)
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